advanced power n-channel enhancement mode electronics corp. power mosfet low gate charge bv dss 25v simple drive requirement r ds(on) 25m fast switching i d 28a description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w w/ t stg t j symbol value unit rthj-case thermal resistance junction-case max. 4.0 /w rthj-amb thermal resistance junction-ambient max. 110 /w data & specifications subject to change without notice AP3303H/j parameter rating drain-source voltage 25 gate-source voltage continuous drain current, v gs @ 10v 28 continuous drain current, v gs @ 10v 18 pulsed drain current 1 130 operating junction temperature range -55 to 150 linear derating factor 0.25 storage temperature range total power dissipation 31 -55 to 150 200811031 thermal data parameter the to-252 package is universally preferred for all commercial- industrial surface mount applications and suited for low voltage applications such as dc/dc converters. the through-hole version (ap3303j) is available for low-profile applications. 20 g d s to-251(j) g d s to-252(h) g d s
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 25 - - v b v dss / t j breakdown voltage temperature coefficient reference to 25 , i d =1ma - 0.02 - v/ r ds(on) static drain-source on-resistance 2 v gs =10v, i d =20a - - 25 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 - 4 v g fs forward transconductance v ds =10v, i d =20a - 20 - s i dss drain-source leakage current (t j =25 o c) v ds =25v, v gs =0v - - 1 ua drain-source leakage current (t j =150 o c) v ds =20v, v gs =0v - - 100 ua i gss gate-source leakage v gs =-- na q g total gate charge 2 i d =20a - 14.5 24 nc q gs gate-source charge v ds = 20v - 3 - nc q gd gate-drain ("miller") charge v gs =10v - 8.5 - nc t d(on) turn-on delay time 2 v ds =15v - 8.8 - ns t r rise time i d =20a - 65 - ns t d(off) turn-off delay time r g =3.3 , v gs =10v - 11 - ns t f fall time r d =0.75 -7- ns c iss input capacitance v gs =0v - 340 540 pf c oss output capacitance v ds =25v - 250 - pf c rss reverse transfer capacitance f=1.0mhz - 98 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =20a, v gs =0v - - 1.5 v t rr reverse recovery time i s =20a, v gs =0 v , - 30.5 - ns qrr reverse recovery charge di/dt=100a/s - 29 - nc notes: 1.pulse width limited by safe operating area. 2.pulse width < 300us , duty cycle < 2%. AP3303H/j 20v 100
AP3303H/j fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 0 10 20 30 40 50 60 70 80 90 02468 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c v g =5.0v 7.0v 8.0v 9.0v 10v 0.01 0.1 1 10 100 0 0.4 0.8 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 2 2.5 3 3.5 4 4.5 5 -50 0 50 100 150 t j ,junction temperature ( o c) v gs(th) (v) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =8a v g =10v 10 20 30 40 50 567891011 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =8a t c =25 o c 0 10 20 30 40 50 60 70 80 02468 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c v g =5.0v 7.0v 8.0v 9.0v 10v
AP3303H/j fig7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedanc e fig 11. switching time waveform fig 12. gate charge waveform t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 10v q gs q gd q g charge 10 100 1000 10000 1 5 9 1317212529 v ds , drain-to-source voltage (v) c (pf) f =1.0mhz ciss coss crss 0 2 4 6 8 10 12 14 16 048121620 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds =12v v ds =16v v ds =20v i d =20a 1 10 100 1000 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) t c =25 o c s ingle pulse dc 10ms 100ms 1s 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty=0.5 single pulse
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